designed for use in sw itching pow er supplies. inverters and as free w heeling diodes. t hese state-of-t he-art devices have the follow i ng features: ? glass passivated chip junctions ? low reverse leakage current ? f a st sw itching for high efficiency ? 150 j operating junction t e mperature ? low stored charge majority carrier conduction ? low forw ard voltage , high current capability ? plastic material used carries underw r iters laboratory flammability classification 94v-o maximum ratings and ch a r a c t e r i s t i c s y mb o l f20c05d unit peak repetitive reverse voltage w o rking peak reverse voltage dc blocking voltage v rrm v rw m v r 5 0 1 0 0 1 5 0 2 0 0 v rms reverse voltage v r(rms ) 3 5 7 0 1 0 5 1 4 0 v average rectifier f o rw ard current per leg t c = 125 j per t o tal device i f(a v ) 10 20 a peak repetitive f o rw ard current (rate v r , square w a ve, 20khz) i fm 2 0 a non-repetitive peak surge current (surge applied at rate load conditions halfw are, single phase, 60hz) i fsm 1 7 5 a operating and storage junction t e mperature range t j , t stg -65 to + 150 j electrial characteristics maximum instantaneous f o rw ard voltage ( i f = 10 amp t c = 2 5 j ) v f 1 . 3 0 v maximum instantaneous reverse current ( rated dc voltage, t c = 2 5 j ) ( rated dc voltage, t c = 125 j ) i r 10 200 ua reverse recovery t i me ( i f = 0.5 a, i r =1.0 , i rr = 0 .25 a ) t rr 1 5 0 n s t y pical junction capacitance (reverse voltage of 4 volts & f= 1 mhz) c p 5 5 p f t o -220a b millimeters dim m i n m a x a 1 4 . 6 8 1 5 . 3 2 b 9 . 7 8 1 0 . 4 2 c 5 . 0 2 6 . 5 2 d 1 3 . 0 6 1 4 . 6 2 e 3 . 5 7 4 . 0 7 f 2 . 4 2 2 . 6 6 g 1 . 1 2 1 . 3 6 h 0 . 7 2 0 . 9 6 i 4 . 2 2 4 . 9 8 j 1 . 1 4 1 . 3 8 k 2 . 2 0 2 . 9 8 l 0 . 3 3 0 . 5 5 m 2 . 4 8 2 . 9 8 o 3 . 7 0 3 . 9 0 ? f20c05 thru f20c20 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2 pb free plating product f20c05 thru f20c20 switchmode dual fast recovery power rectifiers pb f20c05a f20c05c f20c10c f20c15c f20c20c f20c10a f20c10d f20c15a F20C15D f20c20a f20c20d ch a r a c t e r i s t i c s y mb o l f20c05d unit f20c05a f20c05c f20c10c f20c15c f20c20c f20c10a f20c10d f20c15a F20C15D f20c20a f20c20d free datasheet http:///
fig-3 for w ard current dera ting cur ve a verage for w ard rect ified current (a m p .) lead tempera t ure ( j ) fig-4ty p ical junction cap a cit a nce j unct ion cap a cit a nce ( p f) reverse vol t age (v olts.) fig-5peak for w ard surge current peak f o r w ard surg e current ( a m p .) number of cycles a t 60 hz fig-1 t y pical for w ard charact erisit ics a v e r a g e for w a rd re ct ifie d curre nt (a m p .) for w ard vol t age (v olts) fig-2 t y pical reverse charact erist i cs inst ant a neous reverse current (ua.) percent of peak reverse vol t age ( m ) set time base for 20/50 ns/cm f ig-6 reverse recovery t i me characteristic and t e st circuit diagram ? f20c05 thru f20c20 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2 free datasheet http:///
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